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this is information on a product in full production. february 2014 docid024363 rev 6 1/17 17 STGW40H65DFB stgwt40h65dfb trench gate field-stop igbt, hb series 650 v, 40 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? very low saturation voltage: v ce(sat) = 1.60 v (typ.) @ i c = 40 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? very fast soft recovery antiparallel diode ? lead free package applications ? photovoltaic inverters ? high frequency converters description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. the device is part of the new "hb" series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 to-3p 1 2 3 tab c (2, tab) e (3) g (1) sc12850 table 1. device summary order codes marking package packaging STGW40H65DFB gw40h65dfb to-247 tube stgwt40h65dfb gwt40h65dfb to-3p tube www.st.com
contents STGW40H65DFB, stgwt40h65dfb 2/17 docid024363 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid024363 rev 6 3/17 STGW40H65DFB, stgwt40h65dfb electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 80 a i c continuous collector current at t c = 100 c 40 a i cp (1) 1. pulse width limited by maximum junction temperature pulsed collector current 160 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 80 a i f continuous forward current at t c = 100 c 40 a i fp (1) pulsed forward current 160 a p tot total dissipation at t c = 25 c 283 w t stg storage temperature range -55 to 150 c t j operating junction temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.53 c/w r thjc thermal resistance junction-case diode 1.14 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW40H65DFB, stgwt40h65dfb 4/17 docid024363 rev 6 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40 a 1.60 2 v v ge = 15 v, i c = 40 a t j = 125 c 1.7 v ge = 15 v, i c = 40 a t j = 175 c 1.8 v f forward on-voltage i f = 40 a 1.7 2.45 v i f = 40 a t j = 125 c 1.4 i f = 40 a t j = 175 c 1.3 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -5412- pf c oes output capacitance - 198 - pf c res reverse transfer capacitance -107-pf q g total gate charge v cc = 520 v, i c = 40 a, v ge = 15 v, see figure 28 -210-nc q ge gate-emitter charge - 39 - nc q gc gate-collector charge - 82 - nc
docid024363 rev 6 5/17 STGW40H65DFB, stgwt40h65dfb electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 40 a, r g = 5 , v ge = 15 v, see figure 27 -40-ns t r current rise time - 13 - ns (di/dt) on turn-on current slope - 2413 - a/ s t d(off) turn-off delay time 142 - ns t f current fall time - 27 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 498 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 363 - j e ts total switching losses - 861 - j t d(on) turn-on delay time v ce = 400 v, i c = 40 a, r g = 5 , v ge = 15 v, t j = 175 c, see figure 27 -38-ns t r current rise time - 14 - ns (di/dt) on turn-on current slope - 2186 - a/ s t d(off) turn-off delay time - 141 - ns t f current fall time - 61 - ns e on (1) turn-on switching losses - 1417 - j e off (2) turn-off switching losses - 764 - j e ts total switching losses - 2181 - j table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 40 a, v r = 400 v, di/dt=100 a/ s , v ge = 15 v, see figure 27 -62-ns q rr reverse recovery charge - 111 - nc i rrm reverse recovery current - 3 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -140-a/ s e rr reverse recovery energy - 72 - j t rr reverse recovery time i f = 40 a, v r = 400 v, di/dt=100 a/ s , v ge = 15 v, t j = 175 c, see figure 27 -341-ns q rr reverse recovery charge - 2216 - nc i rrm reverse recovery current - 13 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -70-a/ s e rr reverse recovery energy - 884 - j
electrical characteristics STGW40H65DFB, stgwt40h65dfb 6/17 docid024363 rev 6 2.1 electrical characteristics (curve) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) i c 30 20 10 0 0 2 v ce (v) 4 (a) 13 40 50 9v v ge = 15v 60 70 7v am16050v1 i c 30 20 10 0 0 2 v ce (v) 3 (a) 14 40 50 7v v ge =15v 9v 60 70 am16051v1 figure 4. transfer characteristics figure 5. collector current vs. case temperature i c 30 20 10 0 6 8 v ge (v) 9 (a) 710 40 50 -40c t j =175c 25c v ce = 5 v 11 60 70 am16052v1 i c 60 40 20 0 0 50 t c (c) 75 (a) 25 100 80 125 150 am16053v1 figure 6. power dissipation vs. case temperature figure 7. v ce(sat) vs. junction temperature p tot 150 100 0 0 50 t c (c) 75 (w) 25 100 125 150 50 200 250 am16054v1 i c v ce(sat) 1.8 1.6 1.4 1.2 -50 0 t j (c) (v) 50 100 150 2.6 2.4 2.2 2.0 v ge = 15v i c = 80a i c = 40a i c = 20a am16055v1
docid024363 rev 6 7/17 STGW40H65DFB, stgwt40h65dfb electrical characteristics figure 8. v ce(sat) vs. collector current figure 9. forward bias safe operating area v ce(sat) 1.6 1.4 1.2 1.0 0 20 i c (a) (v) 40 60 80 2.2 2.0 1.8 v ge = 15v t j = 175c t j = 25c t j = -40c 2.4 am16056v1 i c 100 10 1 0.1 1 v ce (v) (a) 10 100 10 s 100 s 1 ms (single pulse t c =25c, tj<=175c; vge=15v) am16057v1 figure 10. diode v f vs. forward current figure 11. normalized v (br)ces vs. junction temperature v f 2 1.6 1.2 0.8 20 i f (a) (v) 30 40 50 60 2.4 t j = -40 c t j = 25 c t j = 175 c 70 80 am16058v1 v (br)ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 am16059v1 figure 12. normalized v ge(th) vs. junction temperature figure 13. gate charge vs. gate-emitter voltage v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 am16060v1 v ge (v) 4 2 0 0 q g (nc) 50 100 150 200 6 8 10 12 14 v cc = 520v, i c = 40a i g = 1ma am16061v1
electrical characteristics STGW40H65DFB, stgwt40h65dfb 8/17 docid024363 rev 6 figure 14. switching losses vs temperature figure 15. switching losses vs gate resistance e (j) 850 450 50 -40 t j (c) -15 10 35 60 1250 v cc = 400v, v ge = 15v r g = 10, i c = 40a 85 e off e on 110 135 1650 am16063v1 e (j) 1300 500 2 r g ( ) 46810 2100 v cc = 400v, v ge = 15v r g = 10, t j = 175 c 12 e off e on 14 16 18 20 am16062v1 figure 16. switching losses vs collector curren t figure 17. switching losses vs collector emitter voltage e (j) 2000 1000 0 0 i c (a) 20 40 60 3000 v cc = 400v, v ge = 15v r g = 10, t j = 175c e off e on 80 am16064v1 e (j) 1200 700 200 150 v ce (v) 250 350 450 1700 t j = 175c, v ge = 15v r g = 10, i c = 40a e off e on 2200 am16065v1 figure 18. switching times vs collector current figure 19. switching times vs gate resistance t(ns) 100 10 1 0 i c (a) 20 40 60 80 t j = 175c, v ge = 15v r g = 10, v cc = 400v 100 t f t doff 120 140 t don t r am16066v1 t(ns) 1000 100 10 2 r g () 46810 t j = 175c, v ge = 15v i c = 40a, v cc = 400v 12 t f t doff 14 16 t don t r 18 20 am16067v1
docid024363 rev 6 9/17 STGW40H65DFB, stgwt40h65dfb electrical characteristics figure 20. reverse recovery current vs. diode current slope figure 21. reverse recovery time vs. diode current slope i rm (a) 70 30 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 40a t j = 175c 2000 2500 50 60 40 20 10 80 t j = 25c am16068v1 t rr (s) 150 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 40a t j = 175c 2000 2500 250 200 100 50 t j = 25c 300 am16069v1 figure 22. reverse recovery charge vs. diode current slope figure 23. reverse recovery energy vs. diode current slope q rr (nc) 1500 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 40a t j = 175c 2000 2500 2500 2000 1000 500 t j = 25c 3000 3500 am16070v1 e rr (j) 300 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 40a t j = 175c 2000 2500 500 400 200 100 t j = 25c 600 700 am16072v1 figure 24. capacitance variations c(pf) 1000 100 10 0.1 v ce (v) 110 10000 c ies c oes c res am16071v1
electrical characteristics STGW40H65DFB, stgwt40h65dfb 10/17 docid024363 rev 6 figure 25. thermal impedance figure 26. thermal impedance for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid024363 rev 6 11/17 STGW40H65DFB, stgwt40h65dfb test circuits 3 test circuits figure 27. test circuit for inductive load switching figure 28. gate charge test circuit figure 29. switching waveform figure 30. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGW40H65DFB, stgwt40h65dfb 12/17 docid024363 rev 6 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 31. to-247 drawing 0075325_g
docid024363 rev 6 13/17 STGW40H65DFB, stgwt40h65dfb package mechanical data table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STGW40H65DFB, stgwt40h65dfb 14/17 docid024363 rev 6 figure 32. to-3p drawing 8045950_a
docid024363 rev 6 15/17 STGW40H65DFB, stgwt40h65dfb package mechanical data table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
revision history STGW40H65DFB, stgwt40h65dfb 16/17 docid024363 rev 6 5 revision history table 10. document revision history date revision changes 12-mar-2013 1 initial release. 09-sep-2013 2 ? modified: v ce(sat) values in cover page ? modified: v ce(sat) , v f and v ge(th) typical and max values in table 4 ? modified: entire typical values in table 5 , 6 and 7 ? minor text changes ? added: section 2.1: electrical characteristics (curve) 11-sep-2013 3 ? updated t stg value in table 2: absolute maximum ratings . 23-sep-2013 4 ? updated units in table 6: igbt switching characteristics (inductive load) . 31-oct-2013 5 updated v ce(sat) in table 4: static characteristics . 24-feb-2014 6 updated title and description in cover page.
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